This modulator is delivering unprecedented bandwidth making them an undisputed option to implement high-performance transceivers. Together with an optimized driver they are providing substantial contributions to reduce system power dissipation and enhancing signal integrity. In conclusion, its compact, efficient design is enabling seamless integration and scalability.

This component is an advanced multi-channel ring resonator modulator designed for high-speed optical communication applications. Available for both O band (1310 nm) and C band (1550 nm), this modulator presents a 3-dB electro-optical bandwidth exceeding 145 GHz, therefore it is a key enabler for next-generation transceivers and data transmission at 200+ GBaud PAM4.

Moreover, with a lumped, low-capacitance design, it provides superior RF performance and higher optical signal integrity as a result. With an attractive static insertion loss, it ensures a high system power efficiency by wasting less laser power. In addition, the extinction ratio and the optical modulation amplitude deliver excellent, standard complying operation.

Low Drive Voltage

Ring resonators modulators do not have a definition for half-wave voltage (V_π), instead V_drive is specified. From a 50 Ω driver just 1 V_pp is required, from a high-impedance driver the optimal input is 2 V_pp differential signal for highest performance. This is industry leading for this type of device.

Polariton offers this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.

EO bandwidth	Optical band	Channels	RR variant	Ordering code
145 GHz	O band	4	differential	RR4-C145-o
145 GHz	C band	4	differential (1)	RR4-C145-c
145 GHz	O band	4	differential, monitoring PD, grating couplers	RR4-C145-opg
145 GHz	O band	4	differential, monitoring PD, edge couplers	RR4-C145-ope
145 GHz	O band	8	differential, monitoring PD, grating couplers	RR8-C145-opg
145 GHz	O band	8	differential, monitoring PD, edge couplers	RR8-C145-ope

(1) In addition, a probable 4-channel version with GSG probes for GS operation is available on demand.

	O band	C band
Peak wavelength	1310 nm	1550 nm
Static Insertion loss, fiber to fiber (IL)	<5 dB	<5 dB
Static extinction ratio (ER)	>8 dB	>8 dB
3-dB EO bandwidth	>145 GHz	>145 GHz
Vdrive @ 100 kHz, @ High-Z driver	<2 Vppd	<2 Vppd
DC bias (operating point tuning) voltage	<1.5 V	<1.5 V
Free Spectral Range	~4.7 nm	~4.7 nm

	O band	C band
Optical input power**	19 dBm	19 dBm
RF input power @ 50 Ohm	18 dBm	18 dBm
DC voltage at RF input	0 V	0 V
DC bias voltage DC bias current	2.5 V 15 mA	2.5 V 15 mA
Operating / storage temperature	0°C to 85°C	0°C to 85°C

* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Input power for 4 parallel RRM channels. Operation time of 8000 h at 85°C with a V_π degradation <10%.

	O band	C band
Grating couplers (input and output)	Grating coupler (GC), 127 um pitch	Grating coupler (GC), 127 um pitch
Edge couplers (input and output)	tba	tba
Typical center wavelength at GC angle	1310 nm at 8°	1550 nm at 8°
Optical source needed	DFB laser 1310 nm	DFB laser 1550 nm
Electrical RF and DC interface	Uniform pitch 100 μm (pad layout see drawing)	Uniform pitch 100 μm (pad layout see drawing)

The RRM-C145 from Polariton Technologies is a compact, chip-scale ring resonator modulator that delivers ultra-fast electro-optic modulation. Designed for operation in the O and C bands, it exceeds 145 GHz bandwidth and fits easily into small-footprint systems. As a result, it’s ideal for cutting-edge applications like radio-over-fiber, optical transport, and high-speed testing setups.

The RRM-C145 Ring Resonator Modulator uses a resonant structure to generate intensity modulation with excellent performance. It achieves stable operation beyond 145 GHz—and tests have shown functionality up to 170 GHz. This makes it a solid choice for engineers building next-generation optical systems.

Importantly, the RRM-C145 doesn’t require a bias voltage source. Instead, users can simply tune the laser wavelength to adjust the operating point. This approach simplifies integration and saves valuable board space.

You can order the RRM-C145 as a bare chip or in a semi-packaged format. In both cases, Polariton ensures mechanical compatibility and thermal stability.

Polariton is offering this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.

EO bandwidth	Optical band	RR variant	Ordering code
145 GHz	O band	single-ended, differential, dual	RRM-C145-o
145 GHz	C band	single-ended, differential, dual	RRM-C145-c

(1) A probable 4-channel version with GSG probes for GS operation is available on demand.

	O band	C band
Peak wavelength	1310 nm	1550 nm
Insertion loss (IL)	<10 dB	<8 dB
Static extinction ratio (ER)	>8 dB	>8 dB
DC bias on/off voltage	<1.5 V	<1.5 V
3-dB EO bandwidth	>145 GHz	>145 GHz
Vdrive @ 100 kHz, @ 50 Ohm*	<2 V	<2 V
Free Spectral Range	~4.7 nm	~4.7 nm

	O band	C band
Optical input power**	Contact Polariton	7 dBm
RF input power @ 50 Ohm	18 dBm	18 dBm
DC voltage at RF input	0 V	0 V
DC bias voltage DC bias current	2.5V 15 mA	2.5V 15 mA
Operating / storage temperature	~25 °C	~25°C - 50 °C

* Plasmonic modulators are high-impedance devices, correspondingly twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Thereafter, using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Operation time of 8000 h at 85°C with a V_π degradation <10%.

	O band	C band
Optical input and output	Grating coupler (GC), 127 um pitch	Grating coupler (GC), 127 um pitch
Center wavelength at GC angle	1310 nm at 8°	1550 nm at 8°
Optical source needed	Tunable laser source,1310 nm ±10 nm range	Tunable laser source,1550 nm ±10 nm range
Electrical RF interface	G-S, S-G, S-S̄, S̄-S, or S1-S2, 30 –170 μm pitch	G-S, S-G, S-S̄, S̄-S, or S1-S2, 30 –170 μm pitch
Electrical DC interface	+/-, 75 – 245 μm pitch	+/-, 75 – 245 μm pitch

The plasmonic Packaged Ring Resonator Modulator (RRM-P70) is the choice for high-speed IM/DD and low insertion loss.

The plasmonic Ring Resonator Modulator (RRM-P70) is an ideal solution for high-speed electro optic conversion in the O and C band. Featuring a bandwidth of beyond 70 GHz makes it a first choice for applications in measurement systems, radio-over-fiber (RoF) systems and for high-data-rate optical transport.

The RRM has a resonant spectrum with peaks and extinctions. This allows for a change of the operating point by tuning the wavelength of the laser source, making an additional voltage source obsolete.

Polariton offers this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.

EO bandwidth	Optical band	RR variant	Ordering code
70 GHz	O band	differential drive	RRM-P70-ow
70 GHz	C band	differential drive	RRM-P70-cw

(1) A probable 4-channel version with GSG probes for GS operation is available on demand.

	O band	C band
Peak wavelength	1310 nm	1550 nm
Insertion loss (IL)	<11 dB	<9 dB
Static extinction ratio (ER)	>8 dB	>8 dB
DC bias on/off voltage	<1.5 V	<1.5 V
3-dB EO bandwidth	>70 GHz	>70 GHz
Vп, eq @ 100 kHz, @ 50 Ohm*	<2 V	<2 V
Free Spectral Range	~4.7 nm	~4.7 nm

	O band	C band
Optical input power**	Contact us	7 dBm
RF input power @ 50 Ohm	18 dBm	18 dBm
DC voltage at RF input	0 V	0 V
DC bias voltage DC bias current	2.5V 15 mA	2.5V 15 mA
Operating / storage temperature	~25°C	~25°C

* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Operation time of 8000 h at 85°C with a V_π degradation <10%.

Optical input and output	SMF/PM with FC/APC connectors
Electrical RF interface	Differential, 1 mm female
Electrical DC interface	2x DC pins