C Band 70 GHz Mach-Zehnder Modulator

MZM-P70

Consider this modulator to develop your product prototype and proof of concept. Optical reinforcement and high-speed connectors ensure a performance across the optical and electrical spectrum.

Key Features

3-dB electro-optic bandwidth >70 GHz
C-band operation
Lumped, low-capacitance RF design, high-speed connectors
Benchtop fiber-reinforced form factor

Description

This plasmonic Mach-Zehnder Modulator is an ideal component for high-speed electro-optic modulation (EOM) in the C band. With its module packaging and impressive bandwidth exceeding 70 GHz, this device stands out as the top pick for various applications, including measurement systems, analog and digital data transmissions, and quantum technologies.

The packaged version of our modulator offers a 1 mm female RF connector (single ended).

Related Papers

Variants & Specifications

EO bandwidth	Optical band	MZ variant	Ordering code
70 GHz	C band	balanced, single-ended drive	MZM-P70-bv

Performance Specifications

Peak wavelength	1550 nm
Insertion loss (IL)	<17 dB
Static extinction ratio (ER)	>25 dB
DC bias on/off voltage	<1.5 V
3-dB EO bandwidth	>70 GHz
V_{п, eq} @ 100 kHz, @ 50 Ohm*	<5 V

Maximum Ratings

Optical input power**	3 dBm
RF input power @ 50 Ohm	18 dBm
DC voltage at RF input	0 V
DC bias voltage /DC bias current	2.5V 15 mA
Operating / storage temperature	~25°C

* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Operation time of 8000 h at 85°C with a V_π degradation <10%.

Mechanical and Optical Specifications

Optical input power**	3 dBm
RF input power @ 50 Ohm	18 dBm
DC voltage at RF input	0 V
DC bias voltage /DC bias current	2.5V 15 mA
Operating / storage temperature	~25°C