C Band 110 GHz Mach-Zehnder Modulator
(End-of-Life)
MZM-P110 (End-of-Life)
These modulator deliver unprecedented bandwidth making them an undisputed option to implement high-performance transceivers. Together with an optimized driver they provide substantial contribution to reduce system power dissipation and enhancing signal integrity. Its compact, efficient design enables seamless integration and scalability.
Key Features
-
3-dB electro-optic bandwidth >110 GHz
-
C-band operation
-
Lumped, low-capacitance RF design
-
Compact form factor
Description
This plasmonic Mach-Zehnder Modulator is an ideal component for high-speed electro-optic modulation (EOM) in the C band. With its module packaging and impressive bandwidth exceeding 110 GHz, this device stands out as the top pick for various applications, including measurement systems, analog and digital data transmissions, and quantum technologies.
The packaged version of our modulator offers a 1 mm female RF connector (single ended) and 2 pins for the adjustment of the operation point by means of a DC bias.
By choosing Polariton, you buy into the most advanced technology platform based on organic non-linear materials that will boost your application to the next level.
Related Papers
-
H. Qian, et al, Plasmonic-MZM-based Short-Reach Transmission up to 10 km Supporting >304 GBd Polybinary or 432 Gbit/s PAM-8 Signaling (ECOC, 2021)
-
C. Hoessbacher, et al, Plasmonic modulator with >170 GHz bandwidth demonstrated at 100 GBd NRZ (Optics Express, 2017)
-
C. Haffner, et al, All-plasmonic Mach–Zehnder modulator enabling optical high-speed communication at the microscale (Nature Photonics, 2015)
Variants
Polariton offers this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.
EO bandwidth | Optical band | MZ variant | Ordering code |
110 GHz | C band | balanced, single-ended drive | MZM-P110-bv |
(1) A probable 4-channel version with GSG probes for GS operation is available on demand.
Performance Specifications
Peak wavelength | 1550 nm |
Insertion loss (IL) | <17 dB |
Static extinction ratio (ER) | >25 dB |
DC bias on/off voltage | <1.5 V |
3-dB EO bandwidth | >110 GHz |
Vп, eq @ 100 kHz, @ 50 Ohm* | <5 V |
Maximum Ratings
Optical input power** | 3 dBm |
RF input power @ 50 Ohm | 18 dBm |
DC voltage at RF input | 0 V |
DC bias voltage /DC bias current | 2.5V 15 mA |
Operating / storage temperature | ~25°C |
* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.
** Operation time of 8000 h at 85°C with a Vπ degradation <10%.
Mechanical and Optical Specifications
Optical input and output | SMF/PM with FC/APC connectors |
Electrical RF interface | Single ended, 1 mm female |
Electrical DC interface | 2x DC pins |