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3.2T-DR8 Transmitter PIC

RR4-C145 and RR8-C145 O/C Band Ring Resonator Modulator

This modulator is delivering unprecedented bandwidth making them an undisputed option to implement high-performance transceivers. Together with an optimized driver they are providing substantial contributions to reduce system power dissipation and enhancing signal integrity. In conclusion, its compact, efficient design is enabling seamless integration and scalability.

Key Features

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    400G per lane generation
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    3-dB electro-optic bandwidth >145 GHz

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    Lumped, low-capacitance RF design

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    O/C band operation

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    4/8-channel device

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    Insertion loss (static) below 5 dB (fiber to fiber)
rr4-c145
4-Channel Ring Resonator Modulator
O/C Band 145 GHz Probable 4-Channel Ring Resonator Modulator

Description

This component is an advanced multi-channel ring resonator modulator designed for high-speed optical communication applications. Available for both O band (1310 nm) and C band (1550 nm), this modulator presents a 3-dB electro-optical bandwidth exceeding 145 GHz, therefore it is a key enabler for next-generation transceivers and data transmission at 200+ GBaud PAM4.

Moreover, with a lumped, low-capacitance design, it provides superior RF performance and higher optical signal integrity as a result. With an attractive static insertion loss, it ensures a high system power efficiency by wasting less laser power. In addition, the extinction ratio and the optical modulation amplitude deliver excellent, standard complying operation.

Low Drive Voltage

Ring resonators modulators do not have a definition for half-wave voltage (Vπ), instead Vdrive is specified. From a 50 Ω driver just 1 Vpp is required, from a high-impedance driver the optimal input is 2 Vpp differential signal for highest performance. This is industry leading for this type of device.

Related Papers

What is the current reliability status?

Reliability

Telcordia GR-468 qualification is the target and the achievement will be announced in due time. The current status is released to engaging customers.

We encapsulate our devices at wafer lavel and track all metrics in real-time including the operating point, peak wavelength, insertion loss, extinction ratio and more.

Driver Co-design

The modulator can be drived with low and high-impedance driver. For best performance, we suggest shortest bond wires and RF properties, In addition, a dedicated high-Z compatible device with optimized pad layout. In conclusion, a Driver and modulator co-design generally optimizes system performance.

Operating Point Tuning

Each plasmonic ring can be tuned with a thermo-optic phase shifter in order to set the operating point for best ER and OMA trade-off. Further these elements are also used to compensate for drifts due to temperature changes or laser drifts.

Resonance tuning range is covers the full free spectral range with an external controller.

Advanced variants of this component also include an efficient 1:100 tap and a monitoring photo-diode.

Operation Point Stability

Plasmonic modulators present a much lower wavelength shift due to temperature changes compared to SiPh MRMs (M. Eppenberger, et al. Resonant plasmonic micro-racetrack modulators with high bandwidth and high temperature tolerance (Nature Photonics, 2023)). For instance, typical measured drifts are in range of 0.02 nm/K.

Inquire for the dynamic specifications

Variants and Specifications

Inquire for the RR4 / RR8 product brief

Polariton offers this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.

EO bandwidthOptical bandChannelsRR variantOrdering code
145 GHzO band4differentialRR4-C145-o
145 GHzC band4differential (1)RR4-C145-c
145 GHzO band4differential, monitoring PD, grating couplersRR4-C145-opg
145 GHzO band4differential, monitoring PD, edge couplersRR4-C145-ope
145 GHzO band8differential, monitoring PD, grating couplersRR8-C145-opg
145 GHzO band8differential, monitoring PD, edge couplersRR8-C145-ope

(1) In addition, a probable 4-channel version with GSG probes for GS operation is available on demand.

Performance Specifications

O bandC band
Peak wavelength1310 nm1550 nm
Static Insertion loss, fiber to fiber (IL)<5 dB<5 dB
Static extinction ratio (ER)>8 dB>8 dB
3-dB EO bandwidth>145 GHz>145 GHz
Vdrive @ 100 kHz, @ High-Z driver<2 Vppd<2 Vppd
DC bias (operating point tuning) voltage<1.5 V<1.5 V
Free Spectral Range~4.7 nm~4.7 nm

Maximum Ratings

O bandC band
Optical input power**19 dBm19 dBm
RF input power @ 50 Ohm18 dBm18 dBm
DC voltage at RF input0 V0 V
DC bias voltage
DC bias current		2.5 V
15 mA		2.5 V
15 mA
Operating / storage temperature0°C to 85°C0°C to 85°C

* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Input power for 4 parallel RRM channels. Operation time of 8000 h at 85°C with a Vπ degradation <10%.

Mechanical and Optical Specifications

O bandC band
Grating couplers (input and output)Grating coupler (GC), 127 um pitch Grating coupler (GC), 127 um pitch
Edge couplers (input and output)tbatba
Typical center wavelength at GC angle1310 nm at 8°1550 nm at 8°
Optical source neededDFB laser 1310 nmDFB laser 1550 nm
Electrical RF and DC interfaceUniform pitch 100 μm (pad
layout see drawing)		Uniform pitch 100 μm (pad
layout see drawing)