O/C Band 145 GHz Ring Resonator Modulator
RRM-C145
The RRM-C145 is Polariton’s plasmonic ring-resonator modulator, an ideal component for high-speed electro-optic modulation in the O/C band. Delivered as a chip it targets integration into small factor products.
Key Features
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3-dB electro-optic bandwidth >145 GHz
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Lumped, low-capacitance RF design
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Chip dimensions 1.5 mm x 2 mm
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O/C band operation
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Possible electrical drive: Single, differential, or dual
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Available as single, 4-channel or 8-channel device
Description
The RRM-C145, ring resonator generate an intensity modulation and stand for outstanding high-speed electro-optic conversion for applications in the O and C band. Featuring a bandwidth beyond 145 GHz, the RRM-C145 modulator has been proven working up to 170 GHz, which makes it a first choice for your next generation measurement system, radio-over-fiber communication or high data rate optical transport.
This modulator presents a spectrum with peaks and extinctions, which provides change of the operating point by tuning the wavelength of the laser source, making a bias voltage source unnecessary.
Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.
Related Papers
Variants & Specifications
Polariton offers this device in various variants, being single, quad and octo channel, ideal for a wide range of optical interconnect solutions.
EO bandwidth | Optical band | RR variant | Ordering code |
145 GHz | O band | single-ended, differential, dual | RRM-C145-o |
145 GHz | C band | single-ended, differential, dual | RRM-C145-c |
145 GHz | O band | 4-channel | RR4-C145-o |
145 GHz | C band | 4-channel | RR4-C145-c |
(1) A probable 4-channel version with GSG probes for GS operation is available on demand.
Performance Specifications
O band | C band | |
Peak wavelength | 1310 nm | 1550 nm |
Insertion loss (IL) | <10 dB | <8 dB |
Static extinction ratio (ER) | >8 dB | >8 dB |
DC bias on/off voltage | <1.5 V | <1.5 V |
3-dB EO bandwidth | >145 GHz | >145 GHz |
Vdrive @ 100 kHz, @ 50 Ohm* | <2 V | <2 V |
Free Spectral Range | ~4.7 nm | ~4.7 nm |
Maximum Ratings
O band | C band | |
Optical input power** | Contact Polariton | 0 dBm |
RF input power @ 50 Ohm | 18 dBm | 18 dBm |
DC voltage at RF input | 0 V | 0 V |
DC bias voltage DC bias current | 2.5V 15 mA | 2.5V 15 mA |
Operating / storage temperature | ~25°C | ~25°C |
* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.
** Operation time of 8000 h at 85°C with a Vπ degradation <10%.
Mechanical and Optical Specifications
O band | C band | |
Optical input and output | Grating coupler (GC), 127 um pitch | Grating coupler (GC), 127 um pitch |
Center wavelength at GC angle | 1310 nm at 8° | 1550 nm at 8° |
Optical source needed | Tunable laser source,1310 nm ±10 nm range | Tunable laser source,1550 nm ±10 nm range |
Electrical RF interface | G-S, S-G, S-S̄, S̄-S, or S1-S2, 30 –170 μm pitch | G-S, S-G, S-S̄, S̄-S, or S1-S2, 30 –170 μm pitch |
Electrical DC interface | +/-, 75 – 245 μm pitch | +/-, 75 – 245 μm pitch |