Author: Helena

Preksha Tiwari

Preksha Tiwari

Preksha joined Polariton Technologies in August 2022 as an R&D Engineer. She received her M.Sc. degree in Interdisciplinary Sciences with specialization in Physics and Materials Science in 2018 from ETH Zurich. She completed her Ph.D. at IBM Research Europe – Zurich and ETH Zurich in 2021, where she worked on group III-V compound semiconductors integrated on silicon for active photonics. In particular, she fabricated and characterized micro- and nanolasers and high-speed photodetectors for optical communication.

At Polariton she is part of the nanofabrication team which develops scalable processes for plasmonic and photonic structures in high-performance integrated optical devices.  

Outside the lab, she likes bicycling, being outside, good food, and stepping out of her comfort zone from time to time.

Sónia Fernandes

Sónia Fernandes

Sónia joined Polariton Technologies in August 2022 as a Production Technician. Born in Portugal, she received a Bachelor`s degree in Chemistry from the Faculty of Sciences of the University of Porto in 2014.  

With over 5 years of experience obtained from applying her knowledge working in the ceramic and textile industries, she believes her specific background and education can bring a different approach to the company’s challenges.

Outside of working her hobbies are hiking, playing team sports, reading and hanging out with her friends, especially in the lake.

Giovanni Lillo

Giovanni Lillo

Giovanni Lillo joined Polariton in August 2022.

He had his first encounter with nano- and microtechnology in 1998 at an IBM start-up company. Since then, he has gained experience in the fabrication of microchips in silicon as well as InP, GaAs and InGaAs.

Giovanni is an expert in the fabrication of sensors as well as photonics and laser components.

Roger Dangel

Roger Dangel

Roger Dangel joined Polariton Technologies in July 2022 as Senior R&D Process Engineer focusing on research, development, production, and integration of Polariton’s plasmonic modulators. From 2000 to 2016, as part of IBM’s Photonics Group his main focus was the development of a versatile single-mode and multi-mode optical polymer waveguide technology to be used for electro-optical printed circuit boards in high-performance computers and silicon photonics packaging and integration in data centers. Over the years, Roger is author or co-author of more than 80 scientific publications and 20 filed patents; a large fraction was licensed to business partners as part of technology transfer agreements.

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Transparent Optical-THz Link at 240/192 Gbit/s over 5/115 m Enabled by Plasmonics

Transparent Optical-THz-Optical Link at
240/192 Gbit/s over 5/115 m Enabled
by Plasmonics


Yannik Horst, Tobias Blatter, Laurenz Kulmer, Bertold Ian Bitachon, Benedikt Baeuerle,
Marcel Destraz, Wolfgang Heni, Stefan Koepfli, Patrick Habegger, Marco Eppenberger, Eva De Leo,
Claudia Hoessbacher, Delwin L. Elder, Scott R. Hammond, Lewis E. Johnson,
Larry R. Dalton, Senior Member, IEEE, Yuriy Fedoryshyn, Yannick Salamin,
Maurizio Burla, Senior Member, IEEE, and Juerg Leuthold, Fellow, IEEE
25, 1762-1768 (2017)


Abstract

A transparent Optical-subTHz-Optical link providing record-high single line rates of 240 Gbit/s and 192 Gbit/s on a single optical carrier over distances from 5 to 115 m is demonstrated. Besides a direct mapping of the optical to a 230 GHz subTHz-carrier frequency by means of a uni-traveling carrier (UTC) photodiode, we demonstrate direct conversion of data from the subTHz domain back to the optical domain by a plasmonic modulator. It is shown that the subTHz-to-optical upconversion can even be performed at good quality without any electrical amplifiers. Finally, at the receiver, the local oscillator is employed to directly map the optical signal back to the electrical baseband within a coherent receiver.

Transparent Optical-THz-Optical Link at 240192 Gbits over 5115 m Enabled by Plasmonics

Fig. 1. (a) Vision of future communication networks, where THz links are transparently embedded in the fiber-optical network for backhauling and device-todevice applications.

Transparent Optical-THz-Optical Link at 240/192 Gbit/s over 5/115 m Enabled by Plasmonics

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Daniel Kiesewalter

Daniel Kiesewalter

Daniel is currently pursuing his M.Sc. in Electrical Engineering and Information Technology at ETH Zurich, after completing his B.Sc. in the same field. He joined Polariton as an intern in the ‘Device Simulation and Design’ department due to the potential he saw in the company, the interdisciplinary nature of the field and his fascination with Optics. In his free time, he enjoys playing tennis, doing fitness and rowing. He relishes Persian, Spanish and German cuisine. And his favourite colour is wine red.

Design and synthesis of chromophores with enhanced electro-optic activities in both bulk and plasmonic–organic hybrid devices

Design and synthesis of chromophores with enhanced electro-optic activities in both bulk and plasmonic–organic hybrid devices


Xu, Huajun, et al. “Design and synthesis of chromophores with enhanced electro-optic activities in both bulk and plasmonic–organic hybrid devices.” Materials Horizons (2022).


Abstract:

This study demonstrates enhancement of in-device electro-optic activity via a series of theory-inspired organic electro-optic (OEO) chromophores based on strong (diarylamino)phenyl electron donating moieties. These chromophores are tuned to minimize trade-offs between molecular hyperpolarizability and optical loss. Hyper-Rayleigh scattering (HRS) measurements demonstrate that these chromophores, herein described as BAH, show >2-fold improvement in β versus standard chromophores such as JRD1, and approach that of the recent BTP and BAY chromophore families. Electric field poled bulk devices of neat and binary BAH chromophores exhibited significantly enhanced EO coefficients (r33) and poling efficiencies (r33/Ep) compared with state-of-the-art chromophores such as JRD1. The neat BAH13 devices with charge blocking layers produced very large poling efficiencies of 11.6 ± 0.7 nm2 V−2 and maximum r33 value of 1100 ± 100 pm V−1 at 1310 nm on hafnium dioxide (HfO2).

These results were comparable to that of our recently reported BAY1 but with much lower loss (extinction coefficient, k), and greatly exceeding that of other previously reported OEO compounds. 3 : 1 BAH-FD : BAH13 blends showed a poling efficiency of 6.7 ± 0.3 nm2 V−2 and an even greater reduction in k. 1 : 1 BAH-BB : BAH13 showed a higher poling efficiency of 8.4 ± 0.3 nm2 V−2, which is approximately a 2.5-fold enhancement in poling efficiency vs. JRD1. Neat BAH13 was evaluated in plasmonic–organic hybrid (POH) Mach–Zehnder modulators with a phase shifter length of 10 μm and slot widths of 80 and 105 nm. In-device BAH13 achieved a maximum r33 of 208 pm V−1 at 1550 nm, which is ∼1.7 times higher than JRD1 under equivalent conditions.

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Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications


Heni, Wolfgang, et al. “Ultra-high-speed 2: 1 digital selector and plasmonic modulator IM/DD transmitter operating at 222 GBaud for intra-datacenter applications.” Journal of Lightwave Technology 38.9 (2020): 2734-2739.


Abstract:

We demonstrate a 222 GBd on-off-keying transmitter in a short-reach intra-datacenter scenario with direct detection after 120 m of standard single mode fiber. The system operates at net-data rates of >200 Gb/s OOK for transmission distances of a few meters, and >177 Gb/s over 120 m, limited by chromatic dispersion in the standard single mode fiber. The high symbol rate transmitter is enabled by a high-bandwidth plasmonic-organic hybrid Mach–Zehnder modulator on the silicon photonic platform that is ribbon-bonded to an InP DHBT 2:1 digital multiplexing selector.

Requiring no driving RF amplifiers, the selector directly drives the modulator with a differential output voltage of 622 mVpp measured across a 50 Ω resistor. The transmitter assembly occupies a footprint of less than 1.5 mm × 2.1 mm.

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Ultra-High-Speed 2:1 Digital Selector and Plasmonic Modulator IM/DD Transmitter Operating at 222 GBaud for Intra-Datacenter Applications

Full Image

Fig. 1. 222 GBd transmitter assembly consisting of an InP DHBT 2:1- digital selector (SEL) and plasmonic organic hybrid (POH) Mach–Zehnder modulator (MZM) on silicon photonics. The RF electrodes of the modulator are ribbon-bonded to the output stage of the SEL. The assembly requires less than 2.1 × 1.5-mm².

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100 GBd IM/DD transmission over 14 km SMF in the C-band enabled by a plasmonic SSB MZM

100 GBd IM/DD transmission over 14 km SMF in the C-band enabled by a plasmonic SSB MZM


Benedikt Baeuerle, Claudia Hoessbacher, Wolfgang Heni, Yuriy Fedoryshyn, Ueli Koch, Arne Josten, Delwin L. Elder, Larry R. Dalton, and Juerg Leuthold, “100 GBd IM/DD transmission over 14 km SMF in the C-band enabled by a plasmonic SSB MZM,” Opt. Express 28, 8601-8608 (2020)


Abstract:

100 Gb/s NRZ-OOK transmission over 14 km standard single mode fiber in the C-band is demonstrated with a simple intensity modulation and direct detection scheme. The transmission concept utilizes single sideband modulation and comprises a single differential digital-to-analog converter with adjustable phase offset, a new dual electrode plasmonic Mach-Zehnder modulator, a laser at 1537.5 nm, standard single mode fibers, a photodiode, an analog-to-digital converter, and linear offline digital signal processing. The presented SSB concept requires no DSP and complex signaling at the transmitter. The demonstrated SSB transmitter increased the possible transmission distance by a factor of 4.6 compared to a DSB transmitter. We also investigated the equalization requirements. A T/2-spaced feedforward equalizer requires 27 taps to achieve transmission over 10 km with a BER below the HD-FEC limit. In comparison to a DSB transmitter, the SSB transmitter reduced the receiver DSP complexity by a factor of 13.7.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Optics Express

100 GBd IM/DD transmission over 14 km SMF in the C-band enabled by a plasmonic SSB MZM

Full Image

Fig. 1. Colorized microscope picture of the dual-electrode plasmonic Mach-Zehnder modulator (P-MZM). It comprises MZ interferometer with silicon photonic (SiP) waveguides (WGs) and SiP multimode interference (MMI) couplers and two plasmonic phase modulators. Light is coupled to and from the chip via SiP grating couplers (GC). The electrical signal is contacted via two ground (G) signal (S) contact pads.

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Transparent Optical-THz-Optical Link Transmission over 5/115 m at 240/190 Gbit/s Enabled by Plasmonics

Transparent Optical-THz-Optical Link Transmission over 5/115 m at 240/190 Gbit/s Enabled by Plasmonics


Horst, Yannik, et al. “Transparent optical-THz-optical Link transmission over 5/115 m at 240/190 Gbit/s enabled by plasmonics.” 2021 Optical Fiber Communications Conference and Exhibition (OFC). IEEE, 2021.


Abstract:

The first transparent Optical-THz-Optical link providing record-high line-rates up to 240 and 190 Gbit/s over distances from 5 to 115m is demonstrated. The link is based on direct data-conversion from optical to sub-THz and vice-versa.

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Interview with Yannik Horst:

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