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C Band 145 GHz IQ Modulator

IQM-C145

Polariton’s IQ Modulator IQM-C145 is a high-performance solution for coherent optical communication systems operating in the C band. Designed for symbol rates beyond 180 GBaud, this device enables amplitude and phase modulation of optical signals, allowing for efficient transmission of complex IQ data formats such as QPSK and 16-QAM. With a 3-dB electro-optic bandwidth greater than 145 GHz, the IQM-C145 stands out as one of the fastest modulators available for next-generation optical networks.

Key Features

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    3-dB electro-optic bandwidth >145 GHz

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    Lumped, low-capacitance RF design

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    Chip dimensions 1.5 mm x 2 mm

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    C-band operation

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    Single-ended (SD) or differential-drive (DD) geometry

Description

The plasmonic differential-drive IQ (in-phase and quadrature) electro-optic modulator (EOM) is the choice for high-speed coherent electro-optic conversion in the C band. Featuring a bandwidth beyond 145 GHz, it supports applications by modulating IQ symbols, hence outputting an amplitude and phase modulation.

Driving the chip with the signal and with its inverted version (differential-drive) will provide the best modulation efficiency, specifically since most drivers provide the inverted version of the signal from the start.

Delivered as a chip or semi-packaged chip, our IQ Modulator can be tailored to your needs.

Related Papers

Variants & Specifications

EO bandwidthOptical bandIQ variantOrdering code
145 GHzC bandsingle-drive (SD)IQM-C145-cv
145 GHzC banddifferential (DD)IQM-C145-cw

Performance Specifications

SDDD
Peak wavelength1550 nm1550 nm
Insertion loss (IL)<17 dB<17 dB
Static extinction ratio (ER)>25 dB>25 dB
DC bias on/off voltage<1.5 V<1.5 V
3-dB EO bandwidth>145 GHz>110 GHz
Vп, eq @ 100 kHz, @ 50 Ohm*<5 V<5 V

Maximum Ratings

SDDD
Optical input power**9 dBm9 dBm
RF input power @ 50 Ohm18 dBm18 dBm
DC voltage at RF input0 V0 V
DC bias voltage
DC bias current
2.5V
15 mA
2.5V
15 mA
Operating / storage temperature~25°C~25°C

* Plasmonic modulators are high-impedance devices. Twice the voltage provided by a 50-Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high-impedance-matched driver, double the voltage is required to switch the modulator from the on to the off state.

** Operation time of 8000 h at 85°C with a Vπ degradation <10%.

Mechanical and Optical Specifications

SDDD
Optical input and outputGrating coupler (GC), 127 um pitch Grating coupler (GC), 127 um pitch
Center wavelength at GC angle1550 nm at 8°1550 nm at 8°
Optical source neededPeak WL laser sourcePeak WL laser source
Electrical RF interfaceG-S-G, 70 – 215 μm pitchS-S̄, 170 – 400 μm pitch
Electrical DC interface+-/ +-/ +-, 150 μm pitch+-/ +-/ +-, 150 μm pitch