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  • 110 GHz Plasmonic​ Dual-Drive Ring Resonator Modulator Chip
  • 110 GHz Plasmonic​ Dual-Drive Ring Resonator Modulator Chip

Ring Resonator Modulator 110 GHz

RRM-C110

Polariton’s plasmonic ring-resonator modulator (RRM) is an ideal component for high-speed electro-optic modulation in the C band. Delivered as a chip it targets integration into small factor products.

Key Features

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    3-dB electro-optic bandwidth >110 GHz

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    C-band operation

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    Lumped, low-capacitance RF design

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    Chip dimension 1.5 mm x 2 mm

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    Differential-drive

Description

Ring resonators generate an intensity modulation and stand for outstanding high-speed electro-optic conversion for applications in the C band. Featuring a bandwidth beyond 110 GHz, this modulator has been proven working up to 170 GHz, which makes it a first choice for your next generation measurement system, radio-over-fiber communication or high data rate optical transport.

This modulator presents a spectrum with peaks and extinctions, which provides change of the operating point by tuning the wavelength of the laser source, making a bias voltage source unnecessary.

Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.

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Performance Data

Insertion loss (IL)​

<10 dB

Static extinction ratio (ER)​

>8 dB

3-dB EO bandwidth

>110 GHz

Spectral modulation shift

>0.15 nm/V

Free spectral range

~7 nm

Maximum Ratings

Optical input power*

0 dBm

RF input power @ 50 Ohm

18 dBm

DC voltage at RF input

0 V

Operating / storage temperature​

~25 °C

Mechanical and Optical Specifications


Optical input and output

Grating coupler (GC), 127 µm pitch

Center wavelength

1550 nm at 8°

Needed optical source

Tunable Laser Source, 1550 nm ± 10 nm range

Electrical RF interface

G-S-S̄-G, 80 μm x 80 μm, 100 μm pitch

*Operation time of 8000 h with a Vπ degradation < 2.5%

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