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  • 110 GHz Plasmonic​ Dual-Drive Ring Resonator Modulator Chip
  • 110 GHz Plasmonic​ Dual-Drive Ring Resonator Modulator Chip

RRM-C110

110 GHz Plasmonic Dual-Drive Ring Resonator Modulator

Polariton’s plasmonic ring-resonator modulator (RRM) is an ideal solution for high-speed electro-optic conversion in the C-band. Delivered as a chip it targets integration into small factor products.

Key Features

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    3-dB electro-optic bandwidth >110 GHz

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    C-band operation

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    Lumped, low-capacitance RF design

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    Chip dimension 1.5 mm x 2 mm

Description

Ring resonators generate an intensity modulation and stand for outstanding high-speed electro-optic conversion for applications in the C-band. Featuring a bandwidth beyond 110 GHz, this modulator has been proven working up to 170 GHz, which makes it a first choice for your next generation measurement system, radio-over-fiber communication or high data rate optical transport.

This modulator presents a spectrum with peaks and extinctions, which provides change of the operating point by tuning the wavelength of the laser source, making a bias voltage source unnecessary.

Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.

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Performance Data

Insertion loss (IL)​

<12 dB

Static extinction ratio (ER)​

>5 dB

3dB EO bandwidth

>110 GHz

Spectral modulation shift

>0.18 nm/V

Free spectral range

~7 nm

Maximum Ratings

Optical input power

0 dBm​

RF input power @ 50 Ohm

18 dBm

DC voltage at RF input

0 V

Operating / storage temperature​

~25 °C​

Mechanical and Optical Specifications


Optical input and output

Grating coupler (GC), 250 µm pitch

Center wavelength

1550 nm at 8° GC angle

Needed optical source

Tunable laser, 1550 ± 10 nm

Electrical RF interface

G-S-S-G, 80 x 80 µm, 100 µm pitch

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