110 GHz Plasmonic Dual-Drive Ring Resonator Modulator Chip

O/C Band 110 GHz Ring Resonator Modulator

RRM-C110

Polariton’s plasmonic ring-resonator modulator (RRM) is an ideal component for high-speed electro-optic modulation in the O/C band. Delivered as a chip it targets integration into small factor products.

Key Features

3-dB electro-optic bandwidth >110 GHz
Lumped, low-capacitance RF design
Chip dimensions 1.5 mm x 2 mm
O/C band operation
Possible electrical drive: Single, differential, or dual
Available as single or 4-channel device

Description

Ring resonators generate an intensity modulation and stand for outstanding high-speed electro-optic conversion for applications in the O and C band. Featuring a bandwidth beyond 110 GHz, this modulator has been proven working up to 170 GHz, which makes it a first choice for your next generation measurement system, radio-over-fiber communication or high data rate optical transport.

This modulator presents a spectrum with peaks and extinctions, which provides change of the operating point by tuning the wavelength of the laser source, making a bias voltage source unnecessary.

Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.

Related Papers

T. Blatter, Plasmonic Ring Resonator Modulator Demonstrating IM/DD >400G per lane (ECOC 2024)
M. Eppenberger, et al, Resonant plasmonic micro-racetrack modulators with high bandwidth and high temperature tolerance (Nature Photonics, 2023)

Variant Selector

EO bandwidth	Optical band	RR variant	Ordering code
110 GHz	O band	single-ended, differential, dual	RRM-C110-o
110 GHz	C band	single-ended, differential, dual	RRM-C110-c
110 GHz	O band	4-channel	RR4-C110-o
110 GHz	C band	4-channel	RR4-C110-c

Product Specification

Performance Data

	O band	C band
Peak wavelength	1310 nm	1550 nm
Insertion loss (IL)	<10 dB	<8 dB
Static extinction ratio (ER)	>8 dB	>8 dB
DC bias on/off voltage	<1.5 V	<1.5 V
3-dB EO bandwidth	>110 GHz	>110 GHz
V_drive @ 100 kHz, @ 50 Ohm*	<2 V	<2 V
Free Spectral Range	~4.7 nm	~4.7 nm

Maximum Ratings

	O band	C band
Optical input power**	Contact Polariton	0 dBm
RF input power @ 50 Ohm	18 dBm	18 dBm
DC voltage at RF input	0 V	0 V
DC bias voltage DC bias current	2.5V 15 mA	2.5V 15 mA
Operating / storage temperature	~25°C	~25°C

* V_drive is double if driven by a matched high impedance driver.

** Operation time of 8000 h with a V_drive degradation <10%.

Mechanical and Optical Specifications

	O band	C band
Optical input and output	Grating coupler (GC), 127 um pitch	Grating coupler (GC), 127 um pitch
Center wavelength at GC angle	1310 nm at 8°	1550 nm at 8°
Optical source needed	Tunable laser source,1310 nm ±10 nm range	Tunable laser source,1550 nm ±10 nm range
Electrical RF interface	G-S, S-G, S-S̄, S̄-S, or S₁-S₂, 30 –170 μm pitch	G-S, S-G, S-S̄, S̄-S, or S₁-S₂, 30 –170 μm pitch
Electrical DC interface	+/-, 75 – 245 μm pitch	+/-, 75 – 245 μm pitch