IQ Modulator 110 GHz
IQM-C110
Dive into Polariton’s coherent modulation products for high bandwidth and symbol rate above 180 GBaud simplifying your transceiver design and reducing its power dissipation.
Key Features
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3-dB electro-optic bandwidth >110 GHz
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C-band operation
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Lumped, low-capacitance RF design
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Chip dimensions 1.5 mm x 2 mm
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Differential-drive
Description
The plasmonic differential-drive IQ (in-phase and quadrature) electro-optic modulator (EOM) is the choice for high-speed coherent electro-optic conversion in the C band. Featuring a bandwidth beyond 110 GHz, it supports applications by modulating IQ symbols, hence outputting an amplitude and phase modulation.
Driving the chip with the signal and with its inverted version (differential-drive) will provide the best modulation efficiency, specifically since most drivers provide the inverted version of the signal from the start.
Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.
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Performance Data
Operating wavelength
1520 – 1570 nm
Insertion loss (IL)
<18 dB
Static extinction ratio (ER)
>25 dB
DC bias on/off voltage
<1.5 V
3dB EO bandwidth
>110 GHz
Vп,eq @ 100 kHz @ 50 Ohm*
<5 V
Maximum Ratings
Optical input power**
0 dBm
RF input power @50 Ohm
18 dBm
DC voltage at RF input
0 V
DC bias voltage / current
2.5 V / 20mA
Operating / storage temperature
~25 °C
* Plasmonic modulators are high impedance devices. Twice the voltage provided by a 50 Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high impedance matched driver, double the voltage is required to switch the modulator from the on to the off state.
**Operation time of 8000 h with a Vπ degradation <2.5%.
Mechanical and Optical Specifications
Optical input and output
Grating coupler (GC), 127 µm pitch
Center wavelength
1550 nm at 8°
Electrical RF interface
G-S / S-G, 100-300-100 µm pitch
Electrical DC interface
+- / +- / +-, 150 µm pitch