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110 GHz Plasmonic Dual-Drive IQ Modulator

Dive into Polariton’s coherent modulation products for high bandwidths and symbol rates above 180 GBaud simplifying your transceiver and reducing its power dissipation.

Key Features

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    3-dB electro-optic bandwidth >110 GHz

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    C-band operation

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    Lumped, low-capacitance RF design

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    Chip dimensions 1.5 mm x 2 mm


The plasmonic dual-drive IQ (in-phase and quadrature) modulator is the choice for high-speed coherent electro-optic conversion in the C-band. Featuring a bandwidth beyond 110 GHz, it supports applications by modulating IQ symbols, hence outputting an amplitude and phase modulation.

Driving the chip with the signal and with its inversted version (dual-drive) will provide the best modulation efficiency.

Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.

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Performance Data

Operating wavelength

1520 – 1570 nm

Insertion loss (IL)​

<18 dB​

Static extinction ratio (ER)​

>25 dB

DC bias on/off voltage

<1.5 V

3dB EO bandwidth

>110 GHz

Vп,eq @ 100 kHz​ @ 50 Ohm

<5 V

Maximum Ratings

Optical input power: long term​

0 dBm

RF input power @50 Ohm

18 dBm

DC voltage at RF input

0 V

DC bias voltage / current

2.5 V / 20 mA

Operating / storage temperature​

~25 °C

Mechanical and Optical Specifications

Optical input and output​

Grating coupler (GC), 127 µm pitch

Center wavelength

1550 nm at 8° GC angle

Electrical RF interface​

G-S / S-G, 100-300-100 µm pitch

Electrical DC interface

+- / +- / +-, 150 µm pitch