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IQ Modulator 110 GHz


Dive into Polariton’s coherent modulation products for high bandwidth and symbol rate above 180 GBaud simplifying your transceiver design and reducing its power dissipation.

Key Features

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    3-dB electro-optic bandwidth >110 GHz

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    C-band operation

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    Lumped, low-capacitance RF design

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    Chip dimensions 1.5 mm x 2 mm

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The plasmonic differential-drive IQ (in-phase and quadrature) electro-optic modulator (EOM) is the choice for high-speed coherent electro-optic conversion in the C band. Featuring a bandwidth beyond 110 GHz, it supports applications by modulating IQ symbols, hence outputting an amplitude and phase modulation.

Driving the chip with the signal and with its inverted version (differential-drive) will provide the best modulation efficiency, specifically since most drivers provide the inverted version of the signal from the start.

Delivered as a chip or semi-packaged chip, this product can be tailored to your needs.

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Performance Data

Operating wavelength

1520 – 1570 nm

Insertion loss (IL)​

<18 dB

Static extinction ratio (ER)​

>25 dB

DC bias on/off voltage

<1.5 V

3dB EO bandwidth

>110 GHz

Vп,eq @ 100 kHz​ @ 50 Ohm*

<5 V

Maximum Ratings

Optical input power**

0 dBm

RF input power @50 Ohm

18 dBm

DC voltage at RF input

0 V

DC bias voltage / current

2.5 V / 20mA

Operating / storage temperature​

~25 °C

* Plasmonic modulators are high impedance devices. Twice the voltage provided by a 50 Ohm signal source will drop across the plasmonic modulator. Using a DC source or a high impedance matched driver, double the voltage is required to switch the modulator from the on to the off state.

**Operation time of 8000 h with a Vπ degradation <2.5%.

Mechanical and Optical Specifications

Optical input and output​

Grating coupler (GC), 127 µm pitch

Center wavelength

1550 nm at 8°

Electrical RF interface​

G-S / S-G, 100-300-100 µm pitch

Electrical DC interface

+- / +- / +-, 150 µm pitch